| PART |
Description |
Maker |
| 3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -20% tolerance.
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -10% tolerance.
3W SILICON ZENER DIODE
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JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
娴???洪??靛??ㄤ欢??????
http://
Jinan Gude Electronic D...
|
| EC001031 EC002637 27440402 |
Header, Nominal current: 12 A, Rated voltage (III/2): 320 V, Assembly: Soldering
|
PHOENIX CONTACT
|
| 0710219 |
Header, nominal current: 12 A, rated voltage: 320 V, pitch: 5.08 mm, no. of positions: 6, mounting: Direct mounting - DFK-MSTB 2,5/ 6-GF-5,08
|
Phoenix Contact
|
| 0707316 |
Header, nominal current: 12 A, rated voltage: 320 V, pitch: 5.08 mm, no. of positions: 10, mounting: Direct mounting - DFK-MSTB 2,5/10-G-5,08
|
Phoenix Contact
|
| 0710183 |
Header, nominal current: 12 A, rated voltage: 320 V, pitch: 5.08 mm, no. of positions: 3, mounting: Direct mounting - DFK-MSTB 2,5/ 3-GF-5,08
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Phoenix Contact
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| MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5245B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 11 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.7 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA.
3-26V Dual Operational Amplifier, Ta = -40 to 105°C; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50
5-30V Single Comparator, Ta = -25 to 85°C- Pb-free; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
2-36V Dual Comparator, Ta= -40 to 125°C; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
0.5A, 5V, 52kHz Buck PWM Switching Regulator; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50 表面贴装稳压二极
3-26V Quad Operational Amplifier, Ta= -40 to 105°C - Pb-free; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 表面贴装稳压二极
Small Signal Bias Resistor Transistor SC75 NPN 50V; Package: SC-75 (SOT-416) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000
Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.6 V. Test current 20.0 mA.
SURFACE MOUNT ZENER DIODES
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Shanghai Lunsure Electronic...
Chenyi Electronics
CHENYI[Shanghai Lunsure Electronic Tech]
上海朗硕科技有限公司
Shanghai LUNSURE Electronic Technology Co., Ltd.
涓?捣???绉????????
Shanghai Lunsure Electr...
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| F1A011M01 F1A011M02 |
Current sensing relay. Nominal coil current 20mA. Coil resistance ( -10%) 10.
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Global Components & Controls
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| Q67121-C942 Q67121-C946 Q67121-C967 SAF-C167CR-LM |
16-Bit CMOS Single-Chip Microcontroller
CSN Series closed loop current sensor, measures ac, dc or impulse current, 125 A nominal, ± 200 amp range, center pin, 1000 turn
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SIEMENS AG
|
| BAS70J BAS70-05W BAS70W BAS70-04W BAS70-06W |
SMALL SIGNAL SCHOTTKY DIODE
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 300 A rms nominal, ±900 A range
|
http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
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| BAS70 BAS70-04 BAS70-06 |
CSCA-A Series Hall-effect based, open-loop current sensor, Molex-type connector, 50 A rms nominal, ±150 A range
Surface mount Schottky-Barrier Single-/ Double-Diodes
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Diotec Elektronische
Diotec Semiconductor AG
|
| D1B0510 D1B051D D1A0510 D1A051D D2A0510 D1B1210 D1 |
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 5.
Reed relay. Contact form 1A SPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B SPDT-CO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 24.
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Global Components & Controls
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